A Novel GaN Device with Thin AlGaN/GaN Heterostructure for High-power Applications

We have reported the results of prototyping an inverter as one of the GaN-based power supplies. The inverter comprised a DC converter circuit and AC inverter circuit, and the operating output power was 50 W, reaching a maximum power of 200 W 6) . However, the devices used in these inverters were of the normally-on type. In this work, normally-off type devices were fabricated making full use of GaN HFET structures, developing into novel devices such as normally-off FETs and low-loss diodes. The developmental results will be presented in this report.